DMN2050L n-channel enhancement mode mosfet features ? low on-resistance ? 29m @v gs = 4.5v ? 50m @v gs = 2.5v ? 100m @v gs = 2.0v ? very low gate threshold voltage ? low input capacitance ? fast switching speed ? lead, halogen and antimony free, rohs compliant ? "green" device (notes 2, 3 and 6) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) u c t new prod sot-23 top view e q uivalent circuit source gate drain d g s top view maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 12 v drain current (note 1) i d 5.9 a pulsed drain current (note 4) i dm 21 a thermal characteristics characteristic symbol value units total power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient (note 1) r ja 90 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, on 2oz copper pad layout with r ja = 90c/w. 2. no purposefully added lead. halogen and antimony free. 3. repetitive rating, pulse width limited by junction temperature. product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
DMN2050L electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 1 a v ds = 20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 0.45 ? 1.4 v v ds = v gs , i d = 250 a v gs = 4.5v, i d = 5.0a v gs = 2.5v, i d = 3.1a static drain-source on-resistance r ds (on) ? 24 42 68 29 50 100 m v gs = 2.0v, i d = 1.5a forward transfer admittance |y fs | ? 8 ? s v ds =5v, i d = 2.1a diode forward voltage (note 5) v sd ? 0.9 1.4 v v gs = 0v, i s = 2.0a dynamic characteristics input capacitance c iss ? 532 ? pf output capacitance c oss ? 144 ? pf reverse transfer capacitance c rss ? 117 ? pf v ds = 10v, v gs = 0v f = 1.0mhz gate resistance r g ? 1.3 ? v ds = 0v, v gs = 0v, f = 1.0mhz switching characteristics total gate charge q g ? 6.7 ? v ds = 10v, v gs = 4.5v, i d = 5.0a gate-source charge q gs ? 0.8 ? v ds = 10v, v gs = 4.5v, i d = 5.0a gate-drain charge q gd ? 3.0 ? nc v ds = 10v, v gs = 4.5v, i d = 5.0a new product notes: 4. short duration pulse test used to minimize self-heating effect. 5. product manufactured with green moldi ng compound and does not contain halogens or sb 2 o 3 fire retardants. product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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